Multi-Stage Reconfigurable RF-DC Converter With Deep-n-Well Biasing Using Body-Isolated MOSFET in 180-nm BCDMOS Process

This brief proposes a multi-stage RF-DC converter using body isolation MOSFET with self-biasing at deep- ${n}$ -well of NMOS. Deep- ${n}$ -wells of NMOSs are connected to final stage DC voltage of multi-stage rectifier to apply highest reverse bias for minimizing the leakage current by the body diode formed between ${p}$ -well and deep- ${n}$ -well in NMOSs. The deep- ${n}$ -well biasing contributes to preserving charges collected in the body and results in improving output voltage and power conversion efficiency when multi-stage rectifiers are connected in series. The proposed circuit is fabricated in a 180-nm BCDMOS process with the chip area of 1.24 mm 2. A maximum power conversion efficiency of 57% was obtained at an input of 1-dBm and the output voltage was about 1.4 V at 915MHz RF input. The minimum operating input power is about −10dBm.