Graphitic Carbon Nitride Emitter: From Structural Modification to Optoelectronics Applications

Graphitic carbon nitride (g-C3N4), as a non-metallic two-dimensional semiconductor material, has the advantages of low-cost, simple synthesis, excellent chemical and thermal stability, etc. Due to its unique electronic band structure, g-C3N4 exhibits attractive optoelectronic physical properties. In recent years, it has gained significant attention as a photocatalyst with advanced performance. While most of the current research focuses on the field of photo-electrocatalysis, the material's fascinating optoelectronic physical properties hold great potential in the field of optoelectronic applications. This review highlights the research on the atom- and molecule-modified g-C3N4's optoelectronics properties and its application in optoelectronics applications, such as light-emitting diodes, photovoltaics, and photodetectors, with the aim of attracting more attention from researchers. This review aims to provide a concise overview of the optoelectronic properties of g-C3N4, with a specific focus on research at the atomic and molecular levels. Furthermore, it explores the applications of modified g-C3N4 in optoelectronic fields, such as light-emitting diodes, photovoltaics, and photodetectors, in order to stimulate greater interest and research in these specialized areas.image