A 12nm FinFET-based High-Efficiency 2.4GHz 16dBm Power Amplifier with Digitally Controlled Harmonic Suppression

Shobak Kythakyapuzha, John Liu,Oren Eliezer,Jennifer Kitchen

2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS（2023）

引用 0|浏览4

暂无评分

摘要

A highly-efficient (32%) power amplifier (PA) with 16.5dBm output power and digitally controlled harmonic suppression is designed in a 12 nm FinFET CMOS process. The PA operates from a supply voltage of 1.6 V, consumes 124 mW, and has a total die area is 0.27 mm(2).

查看译文

关键词

High-efficiency power amplifier,Bluetooth Low Energy Transceiver,12nm FinFET CMOS,harmonic suppression

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要