Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier

The DC breakdown characteristic of electrostatic discharge (ESD) protection device, which is an important indicator of its transparency and circuit compatibility, has received widespread attention. Currently, methods such as Verilog-A hardware description language, circuit-level SPICE simulation, and process-level device modeling cannot simultaneously achieve high accuracy, good convergence, and fast simulation speed. Therefore, in this paper, a hybrid ESD model based on Technology Computer Aided Design (TCAD) device-level simulation, Monte Carlo numerical modeling and Verilog-A behavioral modeling is proposed to characterize the ESD characteristics of gate-controlled silicon-controlled rectifier (GCSCR). A device-level model of GCSCR was established using TCAD, and the working mechanism was simulated. By extracting the electric field from TCAD and using the Monte Carlo modeling method, the DC characteristic of GCSCR was accurately characterized. In addition, the snapback characteristic of the device was successfully simulated by Verilog-A. The effectiveness of the above approaches was further verified based on the 0.18 μm standard BCD (Bipolar-CMOS-DMOS) process. Comparison results indicate that the hybrid model exhibits high simulation accuracy, good convergence and good universality and scalability, providing a simple and effective modeling solution for ESD devices of different structures and sizes.1This work is supported by the National Natural Science Foundation of China (Grant No. 62174052, 61827812), Hunan Science and Technology Department Huxiang High-level Talent Gathering Project (Grant No. 2019RS1037) and Innovation Project of Science and Technology Department of Hunan Province (Grant No. 2020GK2018).