Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs

A. Boutayeb,C. Theodorou,D. Golanski, P. Batude,L. Brunet, D. Bosch,F. Guyader, S. Joblot, F. Ponthenier, J. Lacord

Solid-State Electronics（2023）

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摘要

•Aknee has been observed in the mesa isolated SOI pMOSFETs transfer characteristic.•The mesa isolation induces a presence of a parasitic transistor at the SOI pMOSFETs edges, which conducts earlier than the main transistor.•A methodology was presented to decompose edge and center contributions in mesa-isolated SOI pMOSFETs around threshold.•We revealed that the subthreshold regime is always driven by the edges.

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关键词

Mesa isolation, SOI transistor, TCAD, Parasitic transistor, Decomposing methodology, Edge contribution, Planar transistor

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