A 5.2 GHz Inductorless CNTFET-Based Amplifier Design Feasible for On-Chip Implementation

The design of single- and double-stage carbon nanotube field-effect transistor (CNTFET) based power gain amplifiers using an experimentally-calibrated compact model of an advanced CNTFET technology is presented. Operating at a frequency of 5.2 GHz, the designed single- and double-stage amplifiers achieve competitive gain and linear performance whereas maintining low-power consumption in comparison to incumbent Si-based amplifier circuits. The employed inductorless amplifier topology eases the implementation in a monolithic process. Furthermore, the single-stage amplifier achieves an outstanding input(output)-third-order intercept point ${IIP}_{3} = {\rm {4.7(6.6)dBm}} $ . Moreover, the double-stage CNTFET-based amplifier circuit reaches a competitive gain of $S_{21}\sim {\rm {12.5 dB}} $ among results reported in literature. Finally, the obtained results demonstrate that CNTFET technology is a credible contender for implementing RF amplifier circuits suitable for developing RF systems.