Accurate Modelling of GaN HEMT Capacitances in the Framework of the ASMHEMT Model

Results of pulsed IV, CV and loadpull measurements performed on a GaN HEMT are presented. A model is developed for this device in the framework of the ASM-HEMT model. The developed model utilizes the advantage of measuring beforehand several parameters of the model; hence, reducing the number of parameters to be optimized for a reasonable fit to the measured data. A new approach for modelling the OFF-state capacitances of GaN HEMT is also presented which accounts for the details of the structure of the device, while at the same time maintaining the speed of the model.