Room-Temperature, Nanoscale Multiferroic Pb(Fe_0.5Ta_0.5)_1-x(Zr_0.53Ti0.47)_xO₃ (x=0.2, 0.3) Thin Films Grown via the Pulsed Laser Deposition Technique

Multiferroic materials capable of robust magnetoelectric coupling at room temperature are currently being explored for their possible multifunctional device applications. Highly (100)-oriented Pb(Fe0.5Ta0.5)(x)(Zr0.53Ti0.47)(1-x) (PZTFT(x)) thin films (x = 0.2 and 0.3) with a thickness of about 300 nm were grown on La0.67Sr0.33CoO3 (LSCO)-buffered MgO 100-oriented substrates via the pulsed laser deposition method. An analysis of their X-ray diffraction patterns suggests the stabilization of the orthorhombic phase in the thin films at room temperature. Dielectric spectroscopic measurements of the metal-insulator-metal (Pt/PZTFT(x)/LSCO) thin-film capacitors as a function of temperature revealed a diffuse ferroelectric-to-paraelectric phase transition around Tm similar to 520 and 560 K for the x = 0.2 and 0.3 thin films, respectively. Well-saturated electrical hysteresis loops with large remanent (Pr) and saturation (Ps) polarizations were observed in these capacitors, which indicates the establishment of intrinsic ferroelectric ordering in the thin films at room temperature. These thin films retained ferromagnetic/ferrimagnetic ordering up to 300 K and showed saturation magnetization values of 8.3 (x = 0.2) and 6.1 (x = 0.3) emu/cm(3) at room temperature. The magnetoelectric coupling constants of 2040 mV/cmOe (x = 0.2) and 850 mV/cmOe (x = 0.3), respectively, were obtained at an in-plane bias field at room temperature. The present study demonstrates that PZTFT(x) thin films are multiferroic at room temperature with large magnetoelectric couplings, and these materials may be suitable for use in magnetic sensors and spintronic device applications.