High-breakdown-voltage(＞3000 V)and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

GaN power devices have broad application prospects in fast charging systems,power supplies,data centers,and electric vehicles due to their high critical breakdown field strength,high switching frequency,and high conversion ef-ficiency[1-3].AlGaN/GaN/AlGaN double-heterostructure(DH)high-electron-mobility transistors(HEMTs)have been extensively studied owing to their low leakage current and low off-state power dissipation.