A Compact K-band, Asymmetric Coupler-based, Switchless Transmit-Receive Front-End in 0.15μm GaN-on-SiC Technology.

ESSCIRC(2023)

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摘要
A K-band transceiver (TRX) front-end in 0.15$\mu$mGaN with TRX switch functionality is presented. In a compact area of 3m$\mathrm{m}^{2}$, the chip contains a PA and LNA while also realizing a transmit/receive (T/R) switch functionality by the aid of an asymmetric edge coupler, without having an explicit switch in the TRX signal path. In TX mode, the front-end achieves a saturated output power ($\mathrm{P}_{\mathrm{s}\mathrm{a}\mathrm{t}}$) of 27. 7dBm with a 26.8% saturated PAE under a continuous wave (CW) input signal. The RX path achieves a 4. 7dB noise figure (NF). The compact MMIC can be used in phased array transceivers.
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关键词
Gallium Nitride,T/R MMIC,power amplifiers,K band
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