Analysis of Resistive Switching Mechanism in Hexagonal Boron Nitride 2D Material Based Memristive Device

This paper examines the forming-free bipolar resistive switching dynamics in chemically synthesised Hexagonal Boron-Nitride (hBN) 2D-material-based memristive devices. The fabricated MIM (Metal-Insulator-Metal) structure memristive device has Pt (platinum) as a bottom electrode (BE), Cu (copper) as a top electrode (TE), and hBN 2D material used as a resistive switching layer. The crystal structure and surface micro-structure of synthesised hBN have been characterised using X-Ray Diffractometer (XRD)and Field Emission Scanning Electron Microscope (FESEM). The fabricated device's electrical response has been observed using a 4200 Keithley parametric analyser with a low sweeping voltage (-1.5V/1.5V). The fabricated device has well-performed resistive switching dynamics with the typical set (similar to 0.75V) voltage and also shows a good switching window (similar to 50) for continuous 2000 consecutive cycles.