Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices

•We present the development of VO2 thin films as a non-volatile memory element by using ALD and PDA process.•This combined approach was used to induce lattice distortion during PDA to increase the percentage of oxygen capacity.•Post-phase transition, carriers trapped by oxygen vacancy lock insulator-to-metal change, enabling non-volatile memory device.•Uniform mixed-phase VO2 thin film via ALD process explores reliable resistive switching for next-generation memory.