Surface Reactivity of the Au-Si-Ho Quasicrystalline 1/1 Approximant

ISRAEL JOURNAL OF CHEMISTRY(2023)

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摘要
The oxidation of the (100) surface of Au-Si-Ho quasicrystalline approximant was studied using low-energy electron diffraction and X-ray photoelectron spectroscopy. The combination of these two techniques provides evidence for a Ho and Si surface segregation induced by O2 adsorption, resulting in the loss of surface long-range order. image
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surface reactivity
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