A Compact Large-Signal Model Generation of GaN HEMT for RF Circuit Design Implication

In this paper, a compact large-signal model generation of GaN HEMT using measured DC and S-parameters, has been presented. This model employs the linear and non-linear models. The linear model is generated for bias-dependent intrinsic parameters. The non-linear capacitance model has been used, which is based on a hyperbolic function, improves the accuracy of the capacitance behavior near the pinch-off region. The Angelov current model is used as the current source model to describe the electrical (I-V) behavior of HEMT. The model has been validated with the measured DC and S-parameter results.