High-throughput and cost-effective method for production of high-quality semi-insulating InP substrates

Roberto Fornari, Tamás Görög

JOURNAL OF CRYSTAL GROWTH(2023)

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摘要
•Inexpensive technological process for high-yield production of semi-insulating InP wafers.•The obtained semi-insulating wafers have properties that outperform those of standard Fe-doped InP.•The procedure is simple and reproducible, ready for industrial application.
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关键词
B.1 Indium phosphide,A.1 Substrates,A.2 Growth from the melt,A.2 Czochralski method,B.2 Semiconducting III–V materials,B.2 Semi-insulating properties
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