Optimization of MPB for Sn Substituted Lead Bismuth Zirconate Titanate Thin Films by the Electromechanical Behavior Related to Energy Storage Capacity

In this article, we examined the electromechanical behavior of Sn-substituted Lead Bismuth Zirconate Titanate thin films (PBZST thin films). Using the pulsed laser deposition technique (PLD), the thin film growth parameters of bismuth-doped PZST close to MPB were adjusted by varying the similar to(Zr, Sn)/Ti ratios. Thin films (similar to 250 nm) with the stoichiometric formula Pb0.985Bi0.01(Zr0.7Sn0.3) x Ti1 - x O3, (x = 0.935, 0.940, 0.945, and 0.950) were grown on a Pt/TiO2/SiO2/Si substrate using PLD technique at optimized conditions. P-E loop confirms that MPB is near x = 0.945, and further PFM measurements also confirmed the same. Analyzing the PFM phase and amplitude hysteresis loops, local piezo-electric coefficient and remnant strain values were computed as d33 = 330 pm/V and 0.33 at the MPB composition (x = 0.945).