GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications

2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2023）

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摘要

An explicit HEMT channel-charge compact model is developed that describes both energy-conserving and transit charge components in GaN and GaAs HEMTs. Uniquely and significantly, a charge formation-energy function is developed that defines the conserved component. A non-conserved component is identified, which is a transit charge that produces a mutual capacitance.

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关键词

Circuit simulation,HEMTs,GaAs,GaN,Charge conservation,Nitrides,2DEG charge density,Compact model

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