FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction

This paper presents an analytical expression for the FDSOI MOSFETs subthreshold slope model accounting for low electric field quantum mechanical effect. The expression is derived from the perturbation theory applied to the system Hamiltonian considering the inversion layer carriers as particles in a one-dimensional box with an applied electric field the Hamiltonian. The effect is implemented by the introduction of a correction factor G 0 into the classical sub-threshold slope analytical expression. G 0 is a function of the silicon film thickness square times temperature product and depends on the effective masses. The model is validated by its comparison with self-consistent one-dimensional Poisson-Schrodinger simulations and demonstrates unprecedented accuracy, in all studied temperature and bias range. Implemented into the inversion charge model, the correction describes better the back biasing dependence of the FDSOI MOSFET experimental subthreshold drain current.