A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation

The spatially-distributed polarization effect in ferroelectric FET (FeFET) induced by nonzero drain bias is recently found to have a great influence on device and circuit performance, especially for content addressable memory operation, while this physics is ignored in conventional modeling method of FeFET. In this work, we developed a perturbative modeling framework for distributed FeFET, which can accurately capture the spatially-distributed polarization effect induced by the local coupling between polarization and channel charge, especially for large drain bias. Furthermore, considering the ferroelectric (FE) parameter fluctuation with the same statistical distribution but different spatial distribution, the FE parameter close to drain side of FeFET is found to be a crucial variation source for channel conduction, especially for coercive field, providing the guidance of robust FeFET device design strategies.