Quantum transport of 2D Weyl VSi2 N4 -based magnetic tunnel junction: a k • p-NEGF study
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2023)
摘要
We present a systematical simulation on the room temperature strained VSi
2
N
4
-based magnetic tunnel junctions (MTJs). Based on k • p-NEGF quantum transport modeling, the HSE06 band structure around the Fermi level was fitted by Weyl-like Hamiltonian, due to the fully spin-polarized Weyl band feature, a giant TMR ratio and perfect spin injection efficiency (SIE) were theoretically predicted in the MTJs devices. In addition, the current through the MTJs would increase when an elastic electron-phonon (e-ph) coupling effect is included in the quantum transport.
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