Dopant diffused Si surface passivation by H2S gas reaction and quinhydrone-methanol treatment

Phosphorus (n ⁺ ) and boron (p ⁺ ) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J 0 ), strongly depends on the diffusion type and the passivation method. H 2 S reaction at 550°C passivates n ⁺ diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO 2 /SiN X ), while QH-MeOH passivates p ⁺ diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide/silicon nitride stack (Al 2 O 3 /SiN X ).