H³TRB Test on 1.2 kV SiC MOSFETs
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management(2018)
摘要
Reliability characterisation of SiC devices is an ongoing activity. For this work, four different splits of opened and gel-filled, 1200 V SiC MOSFETs in TO247 housings were tested in H³TRB for almost 2000 hours with monitoring of the leakage currents. In addition, electrical measurements and visual inspection were performed at intermediate time-steps. The objectives were investigating different passivation structures as well as the influence of a silicone gel encapsulation on the devices' humidity degradation.
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