S-Parameter Characterization of GaN HEMT Power Transistors for High Frequency Modeling

Gallium Nitride (GaN) power devices that have been developed these recent years are ideal candidates for high frequency power conversion, leading to a reduction of size and weight of power converters. The design of these converters is based on simulations which require accurate device models valid in a wide frequency band. This paper presents the characterization of a packaged GaN power transistor using radiofrequency techniques such as S-parameters and pulsed current-voltage measurements. The objective is to propose a modeling method that will be used when the GaN transistor model is not given. A model based on the characterization results is then implemented in a simulation environment and data are compared to experimental results.