Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2

Flexible electronics have been emerging in the last years for a wide variety of applications. In this scenario, transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MOS 2 ) and tungsten diselenide (WSe 2 ), have captured increased attention because of their complementary transport properties, and their excellent mechanical flexibility [1]. In particular, MOS 2 has shown good electron transport, while WSe 2 has predominantly shown hole transport [2]. This enables complementary metal-oxide semiconductor (CMOS) technology with its inherent advantages over its unipolar counterpart, i.e., low power dissipation and large noise immunity. Here, we demonstrate n-type MOS 2 and p-type WSe 2 field effect transistors (FETs) and combine them to form CMOS inverters on a flexible polyimide (PI) substrate.