$\beta$-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics

The high temperature performance of electronic devices using the emerging material, $\beta$ -Ga 2 O 3 , is important for the high-power applications under extreme environments. In this work, the high aspect-ratio $\beta$ -Ga 2 O 3 FinFETs were tested above room temperature up to 298°C in vacuum for the first time. The hysteresis remained relatively stable (0.1 ∼ 0.35 V) for the 50°C to 150 °C measurements while it was exponentially increased when the temperature exceeded 150 °C and eventually reached 4.59V at 298°C. In addition, the specific on-resistance ( $R_{on, sp}$ ) and subthreshold swing ( $SS$ ) increased gradually with high temperature. This high temperature studies performed here can contribute to the future development of high performance 3-dimensional $\beta$ -Ga 2 O 3 electron devices.