Design of A 10-19 GHz Low-Power LNA With Multiple Bandwidth Extension Techniques

2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)(2023)

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摘要
This paper presents a wideband low-power low noise amplifier (LNA) in 0.15-µm GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. A frequency-dependent feedback loop (FDFL) and a high-pass filter matching network (HPFMN) are employed in the LNA to extend the bandwidth. The HPFMN can compensate the gain roll-off without the deterioration of the noise figure (NF). Besides, the LNA uses a current-reused common-source (CS) cascade topology to achieve high gain with low power consumption. The circuit is powered by a single 5 V supply. The simulated results show that the LNA operates at 10-19 GHz with a minimum NF of 1.2 dB. The LNA achieves a peak gain of 27 dB with a power consumption of 54 mW, and the S11 and S22 are both less than -10 dB. The chip size is merely 0.91×2.16 mm 2 , including all testing pads. The good performance demonstrates the proposed LNA is suitable for multi-mode transceivers.
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关键词
bandwidth extension,feedback,GaAs,low-power,low-noise amplifier
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