A Gaussian Curvature based method for optimizing measurement speed in RF device ANN model
2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT)(2023)
摘要
This study reappraises the optimum measurement pattern relying on Load-pull measurement of RF power transistor. The number of load impedance points required to be measured is optimized based on Gaussian curvature. To validate this modeling approach, load impedance points are reduced by 60% on a 0.25 um GaN HEMT device, yet an average prediction loss of -39.17 dB can be achieved for the generation of the ANN model on a range of input powers.
更多查看译文
关键词
GaN/int,Gaussian curvature based method,HEMT device,load impedance points,load-pull measurement,loss -39.17 dB,measurement pattern,RF device ANN model,RF power transistor
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要