Modeling and Measurement of Dual-Threshold N-polar GaN HEMTS for High-Linearity RF Applications

This paper presents a dual-threshold N-polar GaN MISHEMT for linearization of the transconductance in RF applications where low noise and high-linearity are important. A physics-based compact model based on the MIT Virtual-Source GaN (MVSG) HEMT model is presented for the dual-threshold device. This work develops a methodology to extend the single-threshold model to a dual-threshold device structure. IV characteristics, S-parameters, and two-tone load-pull measurements were performed for experimental corroboration. The dual-threshold model has provisions for tuning physical parameters, predicting the device performance, and optimizing the linear gain efficiency(LGE).