Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors
2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM(2023)
摘要
Recently, area selective atomic layer deposition (AS-ALD) has attached attention for alternative approach of device downscaling in 3D semiconductor fabrication. We reported Ru AS-ALD through vapor-phase adsorption of aldehyde self-assembled monolayers (SAMs). In this study, we investigate Ru ALD process and explored inhibitory efficacy of aldehyde inhibitors on various substrates, including nitride, oxide, and metal surfaces. As a results of chemo-selective adsorption of aldehyde molecules, nitride substrates were selectively passivated, thereby leading to growth retardation of Ru ALD. Finally, through surface functionalization by using aldehyde inhibitors, we achieved Ru AS-ALD on patterned TiN/SiO 2 surfaces.
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关键词
area-selective atomic layer deposition,Ru ALD,aldehyde inhibitor,self-assembled monolayer
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