High Gain 0.25 μm GaN HEMT Based MMIC LNA for GNSS Applications

In this paper, two-stages low noise amplifier (LNA) based on common-source with feedback topology was designed using ALGAN/GAN 0.25um high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. The LNA is designed to be employed for Global Navigation Satellite System (GNSS) Applications. The feedback circuit topology is used in the design to achieve a noise figure of 1 - 1.2 dB with a small signal gain of 33-34 dB. Post-Layout simulation results demonstrate that the input return loss is -11 to -14 dB and the output return loss is -16 to -18 dB across the entire frequency range of 1.5 GHz to 1.7 GHz. The LNA has an output P1 dB and OIP3 of 18 dBm and 28 dBm, respectively which illustrated high linear performance. The power consumption is 0.7 W using a voltage supply of 5.5 V. The total chip size is 2.6 mm x 2.2 mm including the pads.