Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology

2023 Photonics & Electromagnetics Research Symposium (PIERS)（2023）

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摘要

A Ku-band high power amplifier (PA) monolithic microwave integrated circuit (MMIC) with 35W output power is demonstrated with 0.15 µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The 2-stage MMIC exhibits 25.2 ~ 27.5 dB of small signal gain, 45 ~ 46.1 dBm of output power, and 29.2 ~ 39% of power added efficiency (PAE) over the 13 ~ 15 GHz frequency range. The developed PA MMIC with all matching networks is as small as $3.75\ \text{mm} \times 4\ \text{mm}$ , generating output power density per MMIC area of 2,108 ~ 2,716mW/mm ² .

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关键词

developed PA MMIC,efficiency 29.2 percent to 39 percent,frequency 13.0 GHz to 15.0 GHz,frequency range,gain 25.2 dB to 27.5 dB,gallium nitride high electron mobility transistor technology,GaN/int,HEMT technology,Ku-band power amplifier MMIC,matching networks,MMIC area,monolithic microwave integrated circuit,output power density,power 35.0 W,power added efficiency,size 0.15 mum

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