20nm DRAM: A new beginning of another revolution

J. M. Park,Y. S. Hwang,S.-W. Kim, S. Y. Han,J. S. Park, J. Kim,J. W. Seo,B. S. Kim,S. H. Shin,C. H. Cho,S. W. Nam,H. S. Hong,K. P. Lee,G. Y. Jin,E. S Jung

2015 IEEE International Electron Devices Meeting (IEDM)（2015）

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摘要

For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.

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关键词

DRAM,honeycomb structure,air-spacer technology,cell capacitance,argon fluoride immersion lithography layer,parasitic bit-line capacitance,breakdown voltage,size 20 nm

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