A Low Power, Wideband Low-Noise Amplifier with Current-Reused Techniques in 0.18-μm CMOS for 5G Wireless Systems

2022 Asia-Pacific Microwave Conference (APMC)(2022)

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摘要
A Low Power, Wideband Low-Noise Amplifier is presented in this paper. By using (Cgd and Cgs) two RLC impedance branches, the wideband impedance matching can be achieved. In order to save the power consumption, the current-reused technique is employed at second stage. In this work, the result of the proposed LNA realizes a peak gain 14-dB at 20.5 GHz, and the lowest noise figure 4.6 dB at 27 GHz. The return loss of input and output are better than 10-dB from 20 to 28 GHz and 20 to 26.5 GHz, respectively. The dc power dissipation is only 12 mW.
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关键词
K band,CMOS process,Low-noise amplifiers,Current-reused,wideband
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