Efficiency droop free UV-C LED by introducing p-doped LQB and p-n-p-n-p doped AlGaN hole injection layer

The photosensitive and electrical characteristics of almost efficiency-droop-free UV-C LEDs with a Mg-doped LQB and Si-doped shallow periodic Electron Injection Layer in between Mg-doped EBL and Hole Injection Layer are studied numerically in order to enhance the optical and electrical performance. SiLENSe software is used to look into the Quantum Barrier-Quantum Wells region’s IQE, energy band profiles, electron and hole concentration, and radiative recombination rates. The findings show that the proposed UV-C LED has peak IQE 140