High-Power Multimode Laser Diodes (λ = 976 Nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

S. O. Slipchenko,A. A. Podoskin,D. N. Nikolaev,V. V. Shamakhov,I. S. Shashkin, M. I. Kondratov, I. N. Gordeev,A. E. Grishin,A. E. Kazakova,P. S. Gavrina,K. V. Bakhvalov,P. S. Kop’ev,N. A. Pikhtin

Bulletin of the Lebedev Physics Institute（2023）

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摘要

The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a 4-μm thick waveguide and active region designs based on single (SQW) and double (DQW) InGaAs quantum wells. It is shown that the number of quantum wells has a significant effect on the divergence determined by the angle with the 95

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关键词

high-power laser diodes,vertical far-field divergence,active region design,angle with the 95% power content

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