Enhancing the efficiency of SnS-based solar cells using a GLAD technique and CZTSSe layer

SnS is rapidly gaining popularity as a promising material for developing solar technologies owing to its remarkable absorption coefficient, ability to reduce environmental effects, and streamlined manufacturing expenses. However, the SnS-based solar cells' efficiency is still limited due to interface losses. So, this study opens up a creative path by implementing the glancing angle deposition (GLAD) approach and introducing a CZTSSe layer with the goal of improving the performance of SnS-based solar cells. The deposition angle of the SnS layer and its effects on the bandgap properties of SnS solar cell are closely examined. The findings of this investigation offer valuable insights for enhancing the design of SnS-based solar cells and making them more efficient. The results show that by altering the deposition angle, the efficiency is enhanced from 7.83 % to 12.17 %. Additionally, to further boost the efficiency of the SnS solar cell, the thickness and doping concentration of the CZTSSe layer are also being analysed. The final efficiency of 14.02 % has been achieved with the open circuit voltage of 0.68 V for the SnS solar cell.