Investigation of the impact of annealing temperature on characteristics of porous SiOCH films

Abstract Porous SiOCH films with different porosity and low dielectric constant (k) were prepared by sol-gel and spin coating using methyltrimethoxy-silane (MTMS) and 1, 2-bis (trimethoxysilyl) ethane (BTMSE) as precursors and cetyltrimethylammonium chloride (CTAC) as porogen. The impact of different annealing temperatures on the chemical composition, hydrophobicity, pore arrangement, and dielectric constant of porous SiOCH films was investigated. The experimental results show that the SiOCH films with MTMS and BTMSE as precursors contain -C-C-bond and terminal methyl (Si-CH 3 ). After annealing at 400 °C, the chemical composition of the films is stable. The water contact angle (WCA) is larger than 90°, and the films have good hydrophobicity.