Insights on the Thermal Stability of the Sb2Se3 Quasi‐1D Photovoltaic Technology
Solar RRL(2021)
摘要
This work explores the thermal stability of antimony‐based photovoltaic (PV) technologies investigating the effect of low‐temperature (50—350 °C) postdeposition annealings (PDAs) on bare Sb 2 Se 3 absorbers and complete SLG/Mo/Sb 2 Se 3 /CdS/i‐ZnO/ITO devices (5.7% power conversion efficiency with no anti‐reflecting coating or metallic grid). A comprehensive structural analysis by means of X‐ray diffraction and Raman spectroscopy, coupled with optoelectronic characterization, reveals clear evidences of a degradation process dominated by selenium diffusion. The degradation process is observed to start at low PDA temperatures as a shrinkage of the Sb 2 Se 3 unit cell. Further increasing the PDA temperature above 200 °C leads to the formation of Sb oxides and Se secondary phases in bare absorbers, and of CdS 1— x Se x in complete devices at the Sb 2 Se 3 front interface which completely degrade the heterojunction and kill device performance. Furthermore, a clear correlation is found between PV performance decrease and Sb 2 Se 3 layer lattice shrinkage with the increasing PDA temperature ( T > 50 °C). This is the first time that thermal instability is reported for the Sb 2 Se 3 compound at temperatures commonly used during PV module fabrication processes such as emitter/transparent conducting oxide deposition or encapsulation.
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关键词
thermal stability
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