Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10 -10 Ω-cm 2 ρc from Cryogenic (5 K) to Room Temperature. Gerui Zheng,Yuxuan Wang,Haiwen Xu,Rami Khazaka, Lutz Muehlenbein,Sheng Luo,Xuanqi Chen,Rui Shao,Zijie Zheng, Gengchiau Liang,Xiao GongSymposium on VLSI Circuits（2023）引用 0|浏览5暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
