Исследование возможностей метода газофазной эпитаксии из металлорганических соединений для изготовления тонких слоев InAs/GaSb

Capabilities of Metal Organic Chemical Vapor Deposition (MOCVD) method for fabrication of multi-layer InAs/GaSb structures with thin (1-2 nm) layers on GaSb substrates were studied. Properties of fabricated structures were studied by transmission electron microscopy and photo- and electro-luminescence. It was found that during growth, two solid solutions GaInAsSb of different compositions were formed in the active region of the structures. The system obtained is characterized by emission at the wavelength of 4.96 µm at the temperature 77 K. Our results demonstrate new capabilities of MOCVD method for bandgap engineering of semiconductor structures based on InAs/GaSb and designed for optoelectronic devices for infrared wavelength range.