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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory

Po-Hsun Chen,Ting-Chang Chang,Kuan-Chang Chang,Tsung-Ming Tsai,Chih-Hung Pan,Min-Chen Chen,Yu-Ting Su,Chih-Yang Lin,Yi-Ting Tseng,Hui-Chun Huang,Huaqiang Wu,Ning Deng,He Qian,Simon M. Sze

ACS Applied Materials & Interfaces（2017）

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