Isotope effect suggests site-specific nonadiabaticity on Ge(111)c(2x8)

NATURAL SCIENCES(2024)

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摘要
Energy transferred in atom-surface collisions typically depends strongly on projectile mass, an effect that can be experimentally detected by isotopic substitution. In this work, we present measurements of inelastic H and D atom scattering from a semiconducting Ge(111)c(2x8) surface exhibiting two scattering channels. The first channel shows the expected isotope effect and is quantitatively reproduced by electronically adiabatic molecular dynamics simulations. The second channel involves electronic excitations of the solid and, surprisingly, exhibits almost no isotope effect. We attribute these observations to scattering dynamics, wherein the likelihood of electronic excitation varies with the impact site engaged in the interaction.
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关键词
Born-Oppenheimer failure,H atom,isotope effect,semiconductor,surface dynamics
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