Monolithic integration of 1.3 μm asymmetric lasers grown on silicon and silicon waveguides with tapered coupling

Abstract We proposed a design scheme to enable the monolithic integration between a silicon waveguide and a 1.3 μ m wavelength band III–V quantum dot laser, which is epitaxially grown on silicon with an asymmetric structure. The III–V laser is grown in a deep trench of a silicon-on-insulator wafer by the selective area epitaxy technique, and a GaAs coupling layer is inserted into the lower cladding layer of the laser, which can make the optical field distribution of the laser shift down. Besides, a mode-size converter with a three-segment tapered structure is designed to couple the output laser into the standard single-mode silicon waveguide. For the laser, the composition and the thickness of AlGaAs cladding layers and AlGaAs transition layer are optimized based on the optical waveguide theory. When the upper cladding layer is 0.6 μ m Al 0.7 Ga 0.3 As, the lower cladding layer is 1.2 μ m Al 0.25 Ga 0.75 As, and the transition layer is 20 nm Al 0.45 Ga 0.55 As, the optical confinement factors of the active region and the coupling layer are 45.34% and 40.69%, respectively. Then the length of the mode-size converter with a three-segment tapered structure is further optimized by the mode-matching method. When the lengths of the three tapered structures of the mode-size converter are 50 μ m, 53 μ m and 10 μ m respectively, a coupling efficiency of 65% can be obtained between the laser and the Si waveguide. This scheme is expected to realize the efficient optical coupling between the silicon integrated light source and the silicon waveguide, which will promote the development of silicon monolithic photonic integration.