Temperature of Conductive Nanofilaments in Hexagonal Boron Nitride Based Memristors Showing Threshold Resistive Switching (Adv. Electron. Mater. 8/2022)

Conductive Nanofilaments Ag/h-BN/Ag memristors exhibit stable threshold resistive switching because the temperature of the device during operation (at currents ≈1 μA) is very low (i.e. ≈310 K), due to the high in-plane thermal conductivity of h-BN and its low thickness. Only when the device is operated at higher currents (≈200 μA) the temperatures at the h-BN increase remarkably (>500 K), which produces a stable non-volatile conductive nanofilament. More details can be found in article number 2100580 by Mario Lanza, Felix Palumbo, and co-workers.