Controlling the Formation of Conductive Pathways in Memristive Devices (Adv. Sci. 33/2022)

Memristive Devices Sketch of oxygen vacancy segregation toward a specific grain boundary in a hafnia (Hf) based memristor. The orange pillars correspond to atomic positions of Hf calculated based on transmission electron microscopy imaging. The water symbolizes oxygen vacancies attracted (through a waterfall) to the grain boundary region (canyon), which will then form the speedway (Autobahn) of the filamentary conductive current. More details can be found in article number 2201806 by Leopoldo Molina-Luna, Lambert Alff, and co-workers.