Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)

Memory Cells In article number 2106321, Yanqing Wu and co-workers report the smaller footprint of nonconventional computing-in-memory devices based on black phosphorus and rhenium disulfide transistors. By adopting the charge-trapping mechanism, four-transistor nonvolatile ternary content-addressable memory cells are realized for parallel search operations with reduced complexity and thermal budget.