Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS

This paper offers a preliminary study for the analysis of metallic contamination on front-end patterned wafers obtained by two different techniques based on the etching of the whole patterns, LPD-Bulk and VPD-Bulk coupled with an ICPMS. To elaborate the analysis of patterned wafers, methods were first verified and optimised on reference Si wafers. Both techniques are complementary methods for the etching of wafers. LPD-Bulk enables a fast etching of several micrometres of Si but with less precision than VPD-Bulk, which is more adapted for the etching of layers thinner than 1 micrometre. The intentional contamination in SC1 and H 2 O bath of monitoring wafers showed that contamination in H 2 O is better controlled due to the absence of chemical reactions, competition between oxidation and etching processes occurring during SC1. And diffusion of contaminants at the tested temperatures from 20°C to 80°C, does not occur. Heat treatment should be applied to allow the diffusion of metallic contaminants in the bulk of the wafers.