Однофотонное излучение InGaAs-квантовой точки, выращенной на подложке (111)B GaAs

И.А. Деребезов, В.А. Гайслер, А.В. Гайслер,Д.В. Дмитриев, А.И. Торопов,Sven Rodt,Martin von Helversen, S. Reitzenstein

Fizika i tehnika poluprovodnikov(2023)

引用 0|浏览5
暂无评分
摘要
The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
更多
查看译文
关键词
однофотонное излучение,выращенной,подложке
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要