High-Efficiency 250-320 GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

This work shows a broadband, high-efficiency power amplifier (PA) monolithic microwave integrated circuit (MMIC) that uses InP-based metal-oxide-semiconductor (MOS) high-electron-mobility transistors (HEMTs) with an extended drain-side access region and broadband conjugate matching topology. Advanced device technologies, namely, double-side-doped structures, MOS gate structures, and asymmetric gate recess, were adopted, and the length of the drain-side access region was optimized to simultaneously obtain high power and efficiency. A common-source PA MMIC based on InP-based MOS-HEMTs was fabricated, and an interstage circuit was designed to maximize the S-21 per unit stage in the broadband, resulting in a record-high power-added efficiency and wide bandwidth.