Evolution of magnetotransport properties of Weyl semiconductor Te crystals with different Fermi energy

The Weyl semiconductor is a type of semiconductor material that exhibits unique electronic properties. Tel-lurium (Te) is a recently discovered quantum material that exhibits quasilinear electronic dispersion, as opposed to the linear dispersion commonly observed in conventional Weyl semimetals. Its electrical-and magnetotrans-port properties, especially in Te crystals with different Fermi energy, have not been thoroughly investigated in prior studies. Here we successfully grew a series of Te crystals with varied Fermi energy through different temperature-cooling rates in the self-flux method, whose hole concentration can be adjusted from 1015 cm-3 to 1016 cm-3. In the case of low hole-concentration (1015 cm-3) Te crystals, temperature-dependent resistance shows abstract semiconductor-metal-semiconductor transition behavior with temperature varied. However, in the case of high carrier concentration, it demonstrates a transition from a semiconductor to a metallic state at a temperature T (T--50 K). Remarkably, the magnetoresistance (MR), under paralleled electric (E) and magnetic (B) fields (EIIB), evolves from dominant weak-antilocalization behavior in low hole-concentration samples to coexistence of weak-localization and chiral-anomaly effect in high hole-concentration ones. The dependences of coefficient CW of chiral anomaly in Te crystals with different Fermi energy on misaligned angle theta between E and B, and T, were systematically analyzed. The band structure of Te and the presence of an electronic band tail resulting from high hole-concentration doping were verified using angle-resolved photoemission spectroscopy. This study quantitatively discusses the complex magnetotransport evolution of Te crystals with varying Fermi energy. The analysis is based on the impurity band and Berry curvature of Weyl points within this system. The research conducted contributes to the advancement of knowledge regarding the transport properties exhibited by Weyl semiconductors.